| PART |
Description |
Maker |
| GN1L4L GN1L4L-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC[NEC]
|
| GA1L3N GA1L3N-T2 GA1L3N-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
| GN1A4M GN1A4M-T2 GN1A4M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| GA1L4Z GA1L4Z-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| 2SB1182 2SB1188 2SB822 2SB911M 2SB1240 A5800350 2S |
From old datasheet system
Medium power Transistor(-32V/ -2A)
Medium power Transistor(-32V, -2A) 中等功率晶体管（- 32V的，- 2A型）
|
Rohm Co., Ltd.
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| AN1L3N AN1L3N-T AN1L3N-T/JD AN1L3N-T/JM |
Hybrid transistor
on-chip resistor PNP silicon epitaxial transistor
|
NEC
|
| AA1F4Z AA1F4Z-T/JD AA1F4Z-T/JM AA1F4Z/JM |
Hybrid transistor
On-chip resistor NPN silicon epitaxial transistor For mid-speed switching
|
NEC[NEC]
NEC Corp.
|
